高分子化合物及びポジ型レジスト材料並びにこれを用いたパターン形成方法

Polymer compound, positive resist material and pattern-forming method using the same material

Abstract

<P>PROBLEM TO BE SOLVED: To provide a positive resist material having a remarkably high contrast of rate of alkali dissolution between before and after exposure, having high resolution and high sensitivity, having small line edge roughness and exhibiting excellent etching resistance by using a polysilsesquioxane in which hydroxyindane substituted with an acid-unstable group is pendent as a base resin and formulating the polysilsesquioxane with a positive resist material and to provide a polymer compound useful as the base resin for the positive resist material. <P>SOLUTION: The polymer compound has a recurring unit represented by general formula (1) (R<SP>1</SP>is a hydroxy group or an acid-unstable group; m is an integer of 1-4; 1≤x≤1.5). <P>COPYRIGHT: (C)2005,JPO&NCIPI
【解決手段】下記一般式(1)で示される繰り返し単位を有する高分子化合物。 【化1】 (式中、R 1 はヒドロキシ基あるいは酸不安定基を表す。mは1〜4の正の整数である。1≦x≦1.5の範囲である。) 【効果】本発明によれば、酸不安定基で置換されたヒドロキシインダンがペンダントされたポリシルセスキオキサンをベース樹脂としてポジ型レジスト材料に配合することにより、露光前後のアルカリ溶解速度コントラストが大幅に高く、高感度で高解像性を有し、ラインエッジラフネスが小さく、その上優れたエッチング耐性を示す。 【選択図】 なし

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Cited By (3)

    Publication numberPublication dateAssigneeTitle
    US-7919226-B2April 05, 2011Shin-Etsu Chemical Co., Ltd.Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
    US-7928262-B2April 19, 2011Shin-Etsu Chemical Co., Ltd.Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
    US-8030515-B2October 04, 2011Shin-Etsu Chemical Co., Ltd.Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process